Dark current and trailing-edge suppression in ultrafast photoconductive switches and terahertz spiral antennas fabricated on multienergy arsenic-ion-implanted GaAs
Journal
Journal of Applied Physics
Journal Volume
98
Journal Issue
1
Date Issued
2005
Author(s)
Abstract
We report ultrafast (∼2.7 ps, instrument limited) switching responses of a multienergy-implanted GaAs: As+ photoconductive switches (PCSs) with suppressed trailing edge and reduced dark current. This material is highly resistive with dark current as low as 0.94 μA at a bias of 40 V. The carrier mobility of the former is ∼590 cm2 V s, resulting in a small-signal optical responsivity of ∼2 mAW. Pumped at 100 mW and biased at 80 V, the multienergy-implanted GaAs: As+ PCS exhibits peak response (0.35 V) comparable to the best result of single-energy-implanted ones. The improvement on photoconductive response is crucial for the generation of shorter terahertz emission pulses from spiral antennas fabricated on multienergy-implanted GaAs: As+ (0.8 ps) than single-energy-implanted GaAs (1.2 ps), with the central frequency blueshifted to 0.2 THz (from 0.15 THz) and the spectral bandwidth broadened to 0.18 THz (from 0.11 THz). © 2005 American Institute of Physics.
SDGs
Other Subjects
Dark currents; Photoconductive switches (PCS); Spiral antennas; Terahertz antennas; Antennas; Film growth; Ion implantation; Photoconducting devices; Semiconductor doping; Stoichiometry; Switches; Semiconducting gallium arsenide
Type
journal article