A vertical germanium thermooptic modulator for optical interconnects
Resource
IEEE Photonics Technology Letters, 21(4), 245-247
Journal
IEEE Photonics Technology Letters
Pages
245-247
Date Issued
2009
Date
2009
Author(s)
Kuo, Yu-Hsuan
Huang, Ying-An
Chen, Tsang-Long
Abstract
We proposed and demonstrated a novel vertical thermooptic modulator. A Ge-on-insulator device with bottom metal reflector utilizes a self-heating structure to change the temperature- dependent absorption coefficient and refractive index near the absorption edge, thus modulating the light intensity through its asymmetric Fabry-Pérot cavity. The peak contrast ratio is 6.1 dB (and 8.7 dB) at 1561.8 nm (and 1563 nm) under 0.8-V (and 1.2-V) bias with 1.6-mW (and 3.6-mW) power consumption. This approach provides efficient vertical thermooptic modulators requiring smaller temperature change and lower operation voltage for optical interconnects. © 2009 IEEE.
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journal article
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