High efficient 820 nm MOS Ge quantum dot photodetectors for short-reach integrated optical receivers with 1300 and 1550 nm sensitivity

Resource

Electron Devices Meeting, 2002. IEDM '02. Digest. International

Journal

Electron Devices Meeting, 2002. IEDM '02. Digest. International

Pages

-

Date Issued

2002-12

Date

2002-12

Author(s)

Hsu, B.C.

Chang, S.T.

Shie, C.R.

Lai, C.C.

Chen, P.S.

Liu, C.W.

DOI

DOI

N/A

URI

Type

journal article

File(s)

Name

01175786.pdf

Size

383.44 KB

Format

Adobe PDF

Checksum

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