GaAs-Based Transverse Junction Superluminescent Diodes with Strain-Compensated InGaAs/GaAsP Multiple-Quantum-Wells at 1.1μm Wavelength
Resource
IEEE Photonics Technology Letters, 22(12), 917-919
Journal
IEEE Photonics Technology Letters
Journal Volume
22
Journal Issue
12
Pages
917-919
Date Issued
2010
Date
2010
Author(s)
Abstract
In this study, we demonstrate a transverse junction superluminescent diode (TJ-SLD) with an engagement of chirped In xGa $ 1 - xAsGaAs 0.9P 0.1 strain-compensated multiple-quantum-wells (SC MQWs) at 1.1-μm wavelength. The problem relative to inhomogeneous carrier distribution in each QW, which is a problem in traditional vertical junction SLDs (VJ-SLDs), can be effectively minimized by utilizing the benefit of lateral carrier injection in TJ devices. Our demonstrated device offers significant improvements in threshold current, output power, and optical bandwidths compared to TJ-SLD without SC MQWs. Furthermore, compared with the high-performance ∼1-μm VJ-SLDs, this novel device exhibits a comparable output power and 3-dB bandwidth performance with a more stable electroluminescence spectrum, which varies only negligibly under a wide range of bias current.
Subjects
Amplified spontaneous emission (ASE)
Strain compensation
Superluminescent diodes (SLDs)
Type
journal article
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