Optical characterization of InAs Self-Assembled Quantum Dots
Date Issued
2004
Date
2004
Author(s)
Wu, Chia-Wen
DOI
en-US
Abstract
The optical properties are researched with temperature dependent photoluminescence (PL) and photoreflectance (PR) and power dependent experiments on MBE grown InAs self-assembled quantum dots. The density and size uniformity of quantum dots was measured by the instrument of scanning electron microscopy (SEM) and atomic force microscopy (AFM), respectively. The density and average size of InAs QDs was affected by covering buffer layer of InGaAs. The experiment data was fitted by Gaussian profile in the PL experiment, and the features of the fitted result comes from optical transition of QDs, which correlated with the features observed in the PR spectra. Anomalous temperature dependence of PL in broadening parameter and integrated intensity is also discussed. We attributed the enhancement of PL intensity signal to be carrier releasing from potential fluctuation in the wetting layer (WL). The model of the rate equations was proposed and simulated.
Subjects
光反射率調制光譜術
分子束磊晶成長術
原子力顯微鏡
電子式掃描顯微鏡
光激發螢光光譜術
Photoluminescence
Photoreflectance
molecular beam
Type
thesis
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