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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Shallow Trench Isolated-Related Narrow Channel Effect on Kink Effect and Breakdown Behavior of 40nm PD SOI NMOS Device
Details
Shallow Trench Isolated-Related Narrow Channel Effect on Kink Effect and Breakdown Behavior of 40nm PD SOI NMOS Device
Journal
EUROSOI
Date Issued
2009-01
Author(s)
J. I. Lu
H. J. Hung
J. B. Kuo
D. Chen
C. S. Yeh
C. T. Tsai
JAMES-B KUO
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/351953
Type
conference paper
