Novel methods to incorporate deuterium in the MOS structures

Journal

IEEE Electron Device Letters

Journal Volume

22

Journal Issue

11

Pages

519-521

Date Issued

2001

Author(s)

Lee, M.H.

Lin, C.-H.

DOI

10.1109/55.962649

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-0035506742&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/293626

Type

journal article