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College of Electrical Engineering and Computer Science / 電機資訊學院
Electronics Engineering / 電子工程學研究所
An Analysis of Base Bias Current Effect on SiGe HBTs
Details
An Analysis of Base Bias Current Effect on SiGe HBTs
Journal
IEEE Transactions on Electron Devices
Journal Volume
52
Journal Issue
1
Pages
132-136
Date Issued
2005
Author(s)
Lin, Yo-Sheng
Lu, Shey-Shi
DOI
10.1109/TED.2004.841347
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-12344257975&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/316523
http://ntur.lib.ntu.edu.tw/bitstream/246246/20060927122739789644/1/01372722.pdf
SDGs
[SDGs]SDG7
Type
journal article
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Name
01372722.pdf
Size
345.19 KB
Format
Adobe PDF
Checksum
(MD5):2232868efd5543a47bd60927195ad054
