Metal-oxide-semiconductor devices with UHV-Ga 2 O 3 (Gd 2 O 3) on Ge (100)

Journal

International Symposium on VLSI Technology, Systems, and Applications, 2009

Pages

139-140

Date Issued

2009

Author(s)

Chu, LK

Lin, TD

Lee, CH

Tung, LT

Lee, WC

Chu, RL

Chang, CC

Kwo, J

URI

http://scholars.lib.ntu.edu.tw/handle/123456789/349411

Type

conference paper