Rearrangement of Fringing Field by Sidewall Passivated Metal Gate in MIS Tunnel Diode

In order to reduce the interference caused by fringing field, a cost-effective method to form passivation layer on the edge side of aluminum gate was demonstrated. In capacitance-voltage (C-V) characteristics, it is found that the initiation point of deep depletion is at a smaller VG, the sensitivity to light is less evident, and the value of capacitance is more area-dependent. All of these significant different observations are indications of the rearrangement of fringing field. Furthermore, TCAD simulations were employed to support the observed phenomenon. © The Electrochemical Society.