Probing the critical electronic properties of III-V nanowires using optical pump-terahertz probe spectroscopy
Journal
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
ISBN
9781467347174
Date Issued
2013-12-01
Author(s)
Joyce, Hannah J.
Docherty, Callum J.
Wong-Leung, Jennifer
Gao, Qiang
Paiman, Suriati
Tan, H. Hoe
Jagadish, Chennupati
Lloyd-Hughes, James
Herz, Laura M.
Johnston, Michael B.
Abstract
Optical pump-terahertz probe spectroscopy was used to study the key electronic properties of GaAs, InAs and InP nanowires at room temperature. Of all nanowires studied, InAs nanowires exhibited the highest mobilities of 6000 cm2V-1s-1. InP nanowires featured the longest photoconductivity lifetimes and an exceptionally low surface recombination velocity of 170 cm/s. © 2013 IEEE.
Type
conference paper