Observation of femtosecond carrier thermalization time in indium nitride
Journal
Journal of Applied Physics
Journal Volume
103
Journal Issue
12
Date Issued
2008
Author(s)
Abstract
Ultrafast carrier thermalization in n-type indium nitride (InN) with an electron concentration of 3.8×1018 cm−3 was investigated by femtosecond transient transmission measurements at room temperature with different wavelengths. An extremely fast carrier external thermalization time on the order of 400 fs was observed, which is much faster than all previous reports. This observed femtosecond thermalization time is consistent with a prediction based on a Coulomb screening effect. Through wavelength dependent and power dependent studies, even with a 400 fs thermalization time, we did not observe any evidence of the existence of the hot phonon effect, which agrees with a recent report that a longitudinal optical phonon lifetime could be shorter than 300 fs in specific InN samples.
SDGs
Type
journal article