Metal Oxide Semiconductor Device Studies of Molecular-Beam-Deposited Al2O3/InP Heterostructures with Various Surface Orientations (001), (110), and (111)
Resource
APPLIED PHYSICS EXPRESS, 5(6), 061202
Journal
Applied Physics Express
Pages
61202
Date Issued
2012
Date
2012
Author(s)
Chu, Lung-Kun
Merckling, Clement
Dekoster, Johan
Kwo, Jueinai Raynien
Caymax, Matty
Abstract
Passivation of InP surface was carried out in situ with molecular-beam-deposited high-kappa Al2O3. InP samples with surface orientations of (001), (110), and (111) were investigated. An atomically smooth Al2O3/InP(001) interface was observed without interfacial layer formation. In-rich surfaces gave better interfacial quality as evidenced by the improved capacitance-voltage characteristics, exhibiting smaller frequency dispersions and minimized inversion response. The energy distributions of interfacial traps (D-it's) were revealed by conductance measurement for the samples with In-rich surfaces. The D-it's are as low as similar to 10(11) cm(-2) eV(-1) near the conduction band edge, while those near the midgap region are similar to 10(13) cm(-2) eV(-1). (C) 2012 The Japan Society of Applied Physics
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Type
journal article
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