SiC vs. Si: two-dimensional analysis of quasi-saturation behavior of DMOS devices operating at elevated temperatures
Resource
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Journal
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Pages
-
Date Issued
1995-10
Date
1995-10
Author(s)
Chang, Y.W.
Kuo, J.B.
DOI
N/A
Abstract
This paper reports a 2D analysis of the quasi-saturation behavior of 6H-SiC DMOS devices considering surface trapping effect. Based on the study, in the pre-quasi-saturation region, the drain current is predominantly determined by the surface trapping effect. In the quasi-saturation region, the drain current is mainly influenced by the electron mobility in the substrate region.
Type
journal article
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