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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
SiC vs. Si: two-dimensional analysis of quasi-saturation behavior of DMOS devices operating at elevated temperatures
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SiC vs. Si: two-dimensional analysis of quasi-saturation behavior of DMOS devices operating at elevated temperatures
Resource
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Journal
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Pages
-
Date Issued
1995-10
Date
1995-10
Author(s)
Chang, Y.W.
Kuo, J.B.
DOI
10.1109/ICSICT.1995.500092
DOI
N/A
URI
http://ntur.lib.ntu.edu.tw//handle/246246/2007041910032074
Type
journal article
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Name
00500092.pdf
Size
188.96 KB
Format
Adobe PDF
Checksum
(MD5):e517393d2327df862e3fc4c87bc78968
