Research and Design of Semiconductor Lithography Overlay Metrology Simulation System
Date Issued
2009
Date
2009
Author(s)
Tsai, Yung-Kun
Abstract
Photolithography is the key technology driving the advancement of the semiconductor industry and directly influences the critical dimension (CD) of Ultra-Large Scale Integration chips. The reduction of CDs creates more strictly overlay control requirements. In order to control and minimize overlay metrology errors, we have to deal with a number of design parameters both on the metrology tools and on the overlay targets. For speeding the rate of performance improvement, optical simulation can be used to model the effects of target designs on the ultimate metrology performance. Optical simulation on the computer can aid R&D efforts to improve metrology methods. In this thesis, a overlay metrology simulation platform will be presented, developed in-house. The main idea of this platform is to simulate the overlay metrology which integrating with finite difference time domain and non-sequential ray tracing software package. Finite difference time domain method program is used to calculate the overlay target as an amplitude/phase-object in the near-field. And non-sequential ray tracing method program is used to calculate the power of the overlay target in the far-field. The simulation validation test with simulation standard overlay mark BiB（Bar-in-Bar）will also be detailed in this thesis..
Subjects
lithography
numerical simulation
overlay metrology simulation
lighttools
FDTD
Type
thesis
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