Carrier lifetime measurement on electroluminescent metal–oxide–silicon tunneling diodes
Resource
Applied Physics Letters 79 (14): 2264-2266
Journal
Applied Physics Letters
Journal Volume
79
Journal Issue
14
Pages
2264-2266
Date Issued
2001
Date
2001
Author(s)
Abstract
The temporal response of the electroluminescence at the Si band gap energy from a metal-oxide-silicon (MOS) tunneling diode is used to characterize the minority carrier lifetime near the Si/SiO2 interface. The temporal responses reveal that the Shockley-Read-Hall (SRH) recombination lifetimes are 18 and 25.8 μs for the rising and falling edges, respectively, and that the ratio for SRH, radiative, and Auger recombinations is 1:0.196:0.096 at injection current density of 39 A/cm2. The investigation shows that the electroluminescence of the MOS tunneling diode can be significantly increased by reducing the number of the nonradiative recombination centers. © 2001 American Institute of Physics.
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Type
journal article
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