Recrystallization of epitaxial GaN under indentation
Journal
Applied Physics Letters
Journal Volume
92
Journal Issue
14
Pages
143114-1 - 143114-3
Date Issued
2008
Author(s)
Abstract
We report recrystallization of epitaxial (epi-) GaN(0001) film under indentation. Hardness value is measured as ∼10 GPa using a Berkovich indenter. "Pop-in" burst in the loading line indicates nucleation of dislocations setting in plastic motion of lattice atoms under stress field for the recrystallization process. Micro-Raman studies are used to identify the recrystallization process. Raman area mapping indicates the crystallized region. Phonon mode corresponding to E2 (high) ∼570 cm-1 in the as-grown epi-GaN is redshifted to stress free value ∼567 cm-1 in the indented region. Evolution of A1 (TO) and E1 (TO) phonon modes are also reported to signify the recrystallization process. © 2008 American Institute of Physics.
Publisher
American Institute of Physics
Type
journal article