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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
The effect of postoxidation cooling in oxygen on the interface property of MOS capacitors
Details
The effect of postoxidation cooling in oxygen on the interface property of MOS capacitors
Journal
International Journal of Electronics
Journal Volume
60
Journal Issue
2
Pages
287-292
Date Issued
1986
Author(s)
Hwu, J.-G.
Chang, J.-J.
Wang, W.-S.
JENN-GWO HWU
DOI
10.1080/00207218608920785
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-0022663517&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/321883
SDGs
[SDGs]SDG14
Type
journal article
