The effect of postoxidation cooling in oxygen on the interface property of MOS capacitors
Journal
International Journal of Electronics
Journal Volume
60
Journal Issue
2
Pages
287-292
Date Issued
1986
Author(s)
Abstract
The interface properties of Al-SiO2-Si(P) capacitors with dry oxides grown at 900°C are studied by cooling the postoxidation samples in an oxygen and nitrogen ambient. Two significant results, which are quite different from the descriptions in the existing literature, occur when the capacitor is negative charge-temperature treated. One is the hysteresis of the C-V curve; the other is the decrease in the number of interface traps. Samples which were cooled in nitrogen only are also examined and compared. The excess oxygen related species near the interface seems to be responsible for these experimental results.
SDGs
Type
journal article