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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
The effect of postoxidation cooling in oxygen on the interface property of MOS capacitors
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The effect of postoxidation cooling in oxygen on the interface property of MOS capacitors
Journal
International Journal of Electronics
Journal Volume
60
Journal Issue
2
Pages
287-292
Date Issued
1986
Author(s)
Hwu, J.-G.
Chang, J.-J.
Wang, W.-S.
JENN-GWO HWU
DOI
10.1080/00207218608920785
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-0022663517&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/321883
Type
journal article
