Suppression of defect-related luminescence in laser-annealed InGaN epilayers
Journal
Physica Status Solidi (C) Current Topics in Solid State Physics
Journal Volume
9
Journal Issue
3-4
Pages
1021-1023
Date Issued
2012
Author(s)
Abstract
Abstract An In 0.21 Ga 0.79 N epilayer has been studied by using spatially‐resolved photoluminescence spectroscopy and Auger electron spectroscopy. The photoluminescence intensity is shown to be distributed highly inhomogeneously, while the epilayer also exhibits strong defect‐related emission. It is shown that laser annealing at high enough power densities causes redistribution of indium atoms and results in suppression of the defect‐related emission. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Type
journal article