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  4. A W-band Self-Injection-Locked Vital Sign Radar Sensor with On-Chip SIW Monopole Antenna in 0.1-µm GaAs pHEMT
 
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A W-band Self-Injection-Locked Vital Sign Radar Sensor with On-Chip SIW Monopole Antenna in 0.1-µm GaAs pHEMT

Journal
IEEE MTT-S International Microwave Symposium Digest
Journal Volume
2023-June
ISBN
9798350347647
Date Issued
2023-01-01
Author(s)
Gao, Donglin
Li, Shuping
Chen, Austin Ying Kuang
CHUNG-TSE WU  
DOI
10.1109/IMS37964.2023.10188088
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/640295
URL
https://api.elsevier.com/content/abstract/scopus_id/85168544823
Abstract
This paper presents a highly sensitive and low-power W-band (75-110 GHz) vital sign radar sensor with an integrated monopole antenna using a 0.1-µm GaAs pHEMT technology. The proposed self-injection-locked (SIL) radar sensor consists of an 85.09-GHz single-transistor oscillator, a 4-dB directional coupler, and a -6.7-dBi substrate-integrated-waveguide (SIW) monopole antenna while consuming only 56 mW from a 2-V supply. The frequency-modulated signal at millimeter-wave (mm-wave) frequency is extracted using the directional coupler and downconverted via an external harmonic mixer to the baseband (1 MHz) for subsequent signal processing and data acquisition. To estimate the detected vital sign signal, a two-step Fourier analysis technique based on non-overlapped Short-Time Fourier Transform (STFT) and Fast Fourier Transform (FFT) is adopted. The experimental results show that the proposed SIL radar sensor can accurately detect vital signs at a distance up to 0.9 m while achieving an excellent agreement with the ground truth.
Subjects
GaAs pHEMT | self-injection-locked (SIL) radar | substrate-integrated-waveguide (SIW) | vital sign detection | W-band
SDGs

[SDGs]SDG7

Type
conference paper

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