Study of GaN Distributed Bragg Reflector and Its Application to Laser Diode
Date Issued
2004
Date
2004
Author(s)
Chang, Chia-Wei
DOI
zh-TW
Abstract
This thesis is distributed into three parts. The first part is about the theory, numerical simulation and structural design of Distributed Bragg Reflector (DBR).The second part is the fabrication of DBR structure and laser diode device on GaN based materials by using Photo Enhanced Chemically (PEC) oxidation method. The third part is the optical measurement and discussion of optical characteristics on our devices.
We measure photoluminescence (PL) spectrum from two directions : one is from sample edge, and the other is from the normal to the sample surface. We find that there exist several peaks in the edge emission PL spectrum for the device with DBR structure. Besides, we find that the increasing rate of peak intensity is twice than those without DBR structure ( Fabry-Perot case) from the PL spectrum for the emitted light collected from the normal to the sample surface.
Subjects
雷射二極體
分佈式布拉格反射鏡
Distributed Bragg Reflector
Laser Diode
Type
thesis
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