A fully monolithic integrated twin dipole antenna mixer on a GaAs substrate
Resource
Microwave Conference, 2000 Asia-Pacific
Journal
Microwave Conference, 2000 Asia-Pacific
Pages
-
Date Issued
2000-12
Date
2000-12
Author(s)
Deng, K.L.
Meng, C.C.
Lu, S.S.
Lee, H.D.
Wang, H.
DOI
N/A
Abstract
The first fully monolithic X-band twin-dipole antenna mixer consisting of a uni-planar twin-dipole antenna and a GaAs MESFET single gate mixer on the same GaAs substrate fabricated by monolithic microwave integrated circuit technology (MMIC) is reported. The total chip size is 5/spl times/5 mm/sup 2/. This circuit received an RF signal of 10 GHz and down- converted it to an IF signal of 1 GHz with a worse case conversion loss of 22 dB, defined as the ratio of output IF power dissipated in a 50 /spl Omega/ load to the RF available power received by the twin-dipole antenna. The experimental results demonstrate that this topology has potential applications in future low-cost millimeter-wave receivers for smart munitions seekers and automotive-collision-avoidance radars.
SDGs
Type
journal article
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