A High-Performance SiGe-Si Multiple-Quantum-Well Heterojunction Phototransistor
Journal
IEEE Electron Device Letters
Journal Volume
24
Journal Issue
10
Pages
643-645
Date Issued
2003
Author(s)
Pei, Z.
Liang, C.S.
Lai, L.S.
Tseng, Y.T.
Hsu, Y.M.
Chen, P.S.
Lu, S.C.
Tsai, M.-J.
Abstract
A novel phototransistor is fabricated by placing Si/sub 0.5/Ge/sub 0.5//Si multiple quantum wells (MQWs) between the base and the collector of Si-SiGe heterojunction bipolar transistors (HPT). The SiGe-Si MQWs are used as a light absorption layer. The cutoff frequency (f/sub T/) and maximum oscillation frequency (f/sub MAX/) of the phototransistor are found to be 25 GHz, which is suitable for gigabit integrated circuit. The responsivity of 1.3 A/W (external quantum efficiency = 194%) and the pulsewidth of 184 ps at a wavelength of 850 nm are observed. The excellent electrical and optical performance of the Si-SiGe MQW phototransistor makes it attractive for future Si-based optoelectronic integrated circuit applications.
SDGs
Type
journal article