Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications

Resource

Semiconductor Science and Technology 22: 884-889

Journal

Semiconductor Science and Technology 22:

Pages

884-889

Date Issued

2007

Date

2007

Author(s)

Maikap, S.

Lee, H.Y.

Wang, T.Y.

Tzeng, P.J.

Wang, C.C.

Lee, L.S.

Liu, K.C.

Yang, J.R.

Tsai, M.J.

URI

Type

journal article

File(s)

Name

2.pdf

Size

338.99 KB

Format

Adobe PDF

Checksum

(MD5):ff7ee4e949c78ce36d44242128b2ffbb