Nearly White Light Illumination from a GaN-Based Light Emitting Diode Integrated with a Porous SiO2 Layer
Date Issued
2006
Date
2006
Author(s)
Hsieh, Chih-Hao
DOI
zh-TW
Abstract
本研究中，我們使用多孔之二氧化矽薄膜當作紅光光源以及氮化鎵材料之藍/綠光發光二極體，整合成一個能發出近白光的元件。我們分別使用電漿輔助化學氣相沉積系統濕蝕刻以及電感耦合電漿離子蝕刻機以及熱退火形成一多孔之二氧化矽薄膜以及奈米晶矽，並且將其成長於發光二極體之N型平台上，紅光即可從這金屬-氧化物-半導體結構中藉由電子電洞於奈米晶矽複合而產生。在電壓加至14伏特以及16伏特之間時，我們可以發現近白光由此元件而產生，由此實驗的結果可以看出，由此種元件的組合而形成白光是相當具有潛力的。
In this research, we develop a nearly white light emitting device by integrating blue/green emission from a GaN based light emitting diode (LED) with red emission from a porous SiO2 layer. The porous SiO2 layer was fabricated by a novel process procedure to create Si nanocrystals on top of the n-type GaN layer. Red light is generated from the metal-oxide-semiconductor (Ni/Au–SiO2 oxide-n-type GaN) structure due to the electron-hole recombination in the Si nanocrystals. The device shows a blue light emission at a low biased voltage and nearly white light emission (green and red colors) at a bias voltage between 14V and 16V. Our results show the potential of applying such an integrated structure to white light illumination.
Subjects
白光
發光二極體
氮化鎵
二氧化矽
white light
LED
GaN
SiO2
Type
thesis
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