Structural, electronic and magnetic properties of V2O 5-x: An ab initio study
Journal
Journal of Chemical Physics
Journal Volume
130
Journal Issue
21
Date Issued
2009
Author(s)
Xiao, Z.R.
Abstract
Pure V2O5 is a diamagnetic layered semiconductor with many applications such as catalysis. In this paper, we study oxygen vacancy-induced changes in the atomic and electronic structures as well as magnetic properties of V2O5−x within spin density functional theory with generalized gradient approximation. Both the supercell approach and virtual crystal approximation are used to simulate the oxygen-deficient V2O5−x with vacancy concentration x up to 0.5. The 1×2×2 supercell calculations with one O vacancy predict that the formation energies of the apical (O1), bridge (O2), and chain (O3) oxygen vacancies are, respectively, 2.48, 4.17, and 4.44 eV/vacancy, and hence that the O vacancies in V2O5−x would be predominantly of the O1 type. The local structural distortions of the V atoms next to the O vacancies are found to be large for high vacancy density x(x>0.25), and for x∼0.5, even the crystal lattice changes from the orthorhombic to monoclinic symmetry. In all the cases considered, an O vacancy-induced stable or metastable ferromagnetic state with spin magnetic moment of ∼2.0μB/vacancy is found. For x below ∼0.13 and 0.19<x<∼0.45, the ferromagnetic state would be the ground state, while for 0.45≤x≤0.5, the antiferromagnetic state with the V spins on neighboring rungs (AF-2) being antiparallel is the ground state. Importantly, this suggests that undoped V2O5−x with x≤0.13 and 0.19<x<∼0.45 would be a diluted ferromagnetic semiconductor. The AF-2, however, disappears for x≤0.25, while the antiferromagnetic state with the V spins on neighboring ladders being antiparallel (AF-1) occurs for the entire range of x studied. Nevertheless, the AF-1 is energetically more favorable than the ferromagnetic state only in 0.13<x<∼0.19. For low O vacancy concentrations (x<0.25), the electronic structure of V2O5−x is very similar to that of the perfect bulk V2O5, except that 2x electrons now occupy the low V dxy dominant conduction bands which are exchange split. Majority of the magnetization is located on the dxy-orbitals of the V atoms near the O vacancy site. For larger x values, however, the electronic structure may change significantly, and, in particular, the V d-orbital character of the low conduction bands can be altered completely. Analysis of the calculated electronic structure reveals that the oxygen vacancy-induced magnetization in V2O5−x results primarily from the Stoner mechanism.
Type
journal article