Tunneling magnetoresistance in exchange-biased CoFeB/AlOx/Co/IrMn junctions
Resource
Applied Surface Science, 257(5), 1484-1486
Journal
Applied Surface Science
Journal Volume
257
Journal Issue
5
Pages
1484-1486
Date Issued
2010
Date
2010
Author(s)
Chen, Yuan-Tsung
Tseng, Jiun-Yi
Jen, S.U.
Tsai, T.L.
Yao, Y.D.
Abstract
A series of exchange-biased magnetic tunneling junctions (MTJs) were made in an in-plane deposition field (h) = 500 Oe. The deposition sequence was Si(1 0 0)/Ta(30 )/CoFeB(75 )/AlO x (d )/Co(75 )/IrMn(90 )/Ta(100 ), where d was varied from 12 to 30 . The MTJ was formed by the cross-strip method with a junction area of 0.0225 mm 2 . The tunneling magnetoresistance (ΔR/R) of each MTJ was measured. The high-resolution cross-sectional transmission electron microscopic (HR X-TEM) image shows the very smooth interface and clear microstructure. X-ray diffraction (XRD) demonstrates that the IrMn layer of the MTJ exhibits a (1 1 1) texture. From the results (ΔR/R) increases from 17% to 50%, as d increases from 12 to 30 . The tunneling resistance (R o ) of these junctions ranges from 150 Ω to 250 Ω. The exchange-biasing field (H ex ) of the MTJ is 50-95 Oe. Finally, the saturation resistance (R s ) was measured as a function of the angle (α) of rotation, where α is the angle between h and the in-plane saturation field (H s ) = 1.1 kOe. The following figure presents the dependence of R s on α, instead of originally expected independence, the curve actually varies with a period of π. © 2010 Elsevier B.V. All rights reserved.
Type
journal article
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