Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
Have you forgotten your password?
Home
College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments
Details
Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments
Journal
Applied Surface Science
Journal Volume
224
Journal Issue
1-4
Pages
152-155
Date Issued
2004
Author(s)
Lee, S.W.
Chen, L.J.
Chen, P.S.
Tsai, M.-J.
Liu, C.W.
Chen, W.Y.
Hsu, T.M.
CHEE-WEE LIU
DOI
10.1016/j.apsusc.2003.08.098
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/502089
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-1142280319&doi=10.1016%2fj.apsusc.2003.08.098&partnerID=40&md5=4c009ccddd6f899579fa8e3a6ac63d1d
Type
conference paper