Transport and Optical Studies of the D¡ -Conduction Band in Doped GaAs/AlGaAs Quantum Wells
Resource
CHINESE JOURNAL OF PHYSICS, VOL. 39, NO. 4
Journal
CHINESE JOURNAL OF PHYSICS
Journal Volume
VOL. 39
Journal Issue
NO. 4
Pages
-
Date Issued
2001-08
Date
2001-08
Author(s)
Lee, C.H.
Chang, Y.H.
Huang, C.F.
Huang, M.Y.
Lin, H.H.
Lee, C.P.
DOI
2006092712004060187
Abstract
The properties of D¡ ions in quantum wells were studied. It is found that, with an
intermediate concentration of D¡ ions, electrons in the quantum wells possess both band-like
and impurity-like properties. The appearance of the Quantum Hall effect makes it possible to
rule out the existence of an impurity band that is separated from the conduction band. The
results are interpreted in terms of the formation of a D¡ conduction band, with the D¡ band
becoming a tail of the conduction band. The implications of our experimental results on the
metal-insulator transitions in doped semiconductors are discussed.
Publisher
臺北市:國立臺灣大學物理系所
Type
journal article
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