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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport
Details
Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport
Journal
Physical Review B
Journal Volume
101
Journal Issue
7
Date Issued
2020
Author(s)
Marcinkevi?ius, S.
Yapparov, R.
Kuritzky, L.Y.
Wu, Y.-R.
Nakamura, S.
Speck, J.S.
YUH-RENN WU
DOI
10.1103/PhysRevB.101.075305
URI
https://www.scopus.com/inward/record.url?eid=2-s2.0-85079794699&partnerID=40&md5=d753206d32835f1e4c2b118c8baf1f46
https://scholars.lib.ntu.edu.tw/handle/123456789/559389
SDGs
[SDGs]SDG7
Type
journal article
