Growth and electron effective mass measurements of strained Si and Si0.94Ge0.06 on relaxed Si0.62Ge0.38 buffers grown by rapid thermal chemical vapor deposition

Journal

Materials Chemistry and Physics

Journal Volume

49

Journal Issue

1

Pages

29-32

Date Issued

1997

Author(s)

Liu, C.W.

Venkataraman, V.

DOI

10.1016/S0254-0584(97)80123-X

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/502095

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-0031153228&doi=10.1016%2fS0254-0584%2897%2980123-X&partnerID=40&md5=c9226063c9aa4577e2a9df487e066dfd

Type

journal article