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Growth and electron effective mass measurements of strained Si and Si<inf>0.94</inf>Ge<inf>0.06</inf> on relaxed Si<inf>0.62</inf>Ge<inf>0.38</inf> buffers grown by rapid thermal chemical vapor deposition
Journal
Materials Chemistry and Physics
Journal Volume
49
Journal Issue
1
Pages
29-32
Date Issued
1997
Author(s)
Type
journal article