GSMBE grown (GaIn)P/GaAs heterojunction bipolar transistors exhibiting current gains up to 590

Journal

Electronics Letters

Journal Volume

28

Journal Issue

4

Pages

398-400

Date Issued

1992

Author(s)

Lu, S.S.

Huang, C.C.

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-0026819131&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/298346

Type

journal article