Photoluminescence study of ZnO nanoparticles and Fabrication of electroluminescence device using ZnO nanoparticles
Date Issued
2006
Date
2006
Author(s)
Huang, Yau-Te
DOI
zh-TW
Abstract
The research in this paper can be separated two parts. First, photoluminescence intensity of zinc oxide nanoparti-cles can be enhanced and the quality of zinc oxide can be improved by controlling thermal annealing process condition.We deposite zinc oxide nanoparticles on silicon substrate,and it is annealed in high temperature furnace.After zinc oxide nanoparticles are annealed at 800℃ for 70~80min in the atmosphere,the stronger PL intensity can be obtained.When zinc oxide nanoparticles was deposited on Si(100) and it is annealed at 900℃ for 20min in the ambient with the ratio O2/Ar=0.3, the zinc oxide nanoparticle films with preferred (201) orientation can be grown.If zinc oxide nanopartilces was deposited on Si(110),it will contribute to the growth of the film with preferred (102) orientation.Second,zinc oxide nanoparti- cles is used to fabricate electroluminescence devices.We use the mixture of ZnO and PMMA as emission layer.The device can emit violet light for ITO/ZnO+PMMA/Al struc- ture.The hole transport material TPD is used to fabricate the device of ITO/TPD /ZnO+PMMA/Al structure.The device can emit violet light uniformly in the emission area.If we use PVK as hole transport layer,the stronger intensity of blue and violet light can be emitted from the device of ITO/PVK+ZnO+PMMA structure.The metal Ca is used as cathode material to fabricate the device of ITO/ZnO +PMMA/Ca/Al structure or ITO/TPD+PMMA/ZnO+PMMA/Ca/Al structure.It can increase the time of emission and device lifetime.
Subjects
氧化鋅奈米粒子
光激發光
電激發光
ZnO nanoparticles
photoluminescence
electroluminescence
Type
thesis
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