Occurrence of Polytype Transformation during Nitrogen Doping of SiC Bulk Wafer
Resource
Materials Science Forum,Vol. 600-601,39-42.
Journal
Materials Science Forum
Pages
39-42
Date Issued
2008
Date
2008
Author(s)
Chen, J.
Lien, S.C.
Shin, Y.C.
Feng, Zhe Chuan
Kuan, C.H.
Zhao, J.H.
Lu, Wei Jie
Abstract
The polytype structural variations of a set of SiC bulk wafers with different Nitrogen (N) doping levels, prepared by Physical Vapore Deposition (PVD), are studied. The initial growth conditions were used to produce 6H-polytype SiC, which has been approved for the undoped and lightly doped materials. However, when extreme high N-dopants were applied, the obtained wafer was found with 4H- and 15R-polytype features. Our experimental results of HR-TEM and Raman scattering have revealed clearly the polytype transformation, indicating that the inducement of N in the reactor leads to the polytype transformation of the resulted SiC crystal.
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Type
journal article
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