Accumulation-type vs. inversion-type: narrow channel effect in VLSI mesa-isolated fully-depleted ultra-thin SOI PMOS devices

Resource

SOI Conference, 1995. Proceedings., 1995 IEEE International

Journal

SOI Conference, 1995. Proceedings., 1995 IEEE International

Pages

-

Date Issued

1995-10

Date

1995-10

Author(s)

Su, K.W.

Kuo, J.B.

DOI

DOI

N/A

URI

Type

journal article

File(s)

Name

00526449.pdf

Size

204.54 KB

Format

Adobe PDF

Checksum

(MD5):5b5174ea74c2fdc8a91034f33f0785af