Accumulation-type vs. inversion-type: narrow channel effect in VLSI mesa-isolated fully-depleted ultra-thin SOI PMOS devices
Resource
SOI Conference, 1995. Proceedings., 1995 IEEE International
Journal
SOI Conference, 1995. Proceedings., 1995 IEEE International
Pages
-
Date Issued
1995-10
Date
1995-10
Author(s)
Su, K.W.
Kuo, J.B.
DOI
N/A
Abstract
The paper reports the sidewall-related narrow channel effect in mesa-isolated fully-depleted ultra-thin SOI inversion-type and accumulation-type PMOS devices. Based on the study, contrary to inversion-type devices, the threshold voltage of mesa-isolated ultra-thin SOI accumulation-type PMOS devices shrinks as the channel width scales down as a result of the buried-channel effect influenced by the sidewall via the buried oxide.
Type
journal article
File(s)![Thumbnail Image]()
Loading...
Name
00526449.pdf
Size
204.54 KB
Format
Adobe PDF
Checksum
(MD5):5b5174ea74c2fdc8a91034f33f0785af