Growth and Transport Properties of Indium Nitride Nanowires
Date Issued
2006
Date
2006
Author(s)
Chien, Chia-Te
DOI
en-US
Abstract
Because of high mobility and high saturation velocity, InN has, among the III-nitride semiconductors, become an attractive material for electronic devices of superior performance. The other hand, one-dimensional nanostructures, such as nanowires and nanobelts, has attracted great attention because of their peculiar optical, electrical and mechanical properties. 1D nanostructures illustrate the smallest dimension structure that can be efficiently transport electrical carriers, and thus are ideally suited to the critical and ubiquitous task of moving charges in integrated nanoscaled system.
In this study, indium nitride nanowire was successfully grown by MOCVD system. Structure studied by x-ray diffraction (XRD) spectra and Raman spectrometer. High resolution electron microscope (HRTEM) measurement revealed that single crystalline of indium nitride nanowire. (IR-PL) measurement system showed the 0.76eV band gap of InN nanowire. The scanning electron microscope (SEM) investigations on the indium nitride (InN) showed the morphology of nanowire. Transport properties of single InN nanowire was measured by two probe and low temperature system. Multi-terminals measurement shows more direct result of InN nanowire resistivity. The plot of resistivity to diameter indicates the effect of surface accumulation of high concentration electronics. The other hand, we have measured Photoconductance property of InN nanowire.
Subjects
氮化銦
奈米線
電性
InN
nanowire
transport
Type
thesis
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