Sub-fM DNA sensitivity by self-aligned maskless thin-film transistor-based SoC bioelectronics
Journal
Symposium on VLSI Technology
Pages
127-128
Date Issued
2012
Author(s)
Abstract
This is the first study to successfully achieve record DNA sensitivity (sub-ƒM) by self-aligned, maskless, dual-channel, and metal-gate-based thin-film transistor nano-wire FET. Both novel device architecture (dual-channel) and optimization of integration processes (microcrystalline silicon and self-aligned sidewall sub-50 nm critical dimension) of nano-wire FET enhance the sensitivity to biological entities substantially. Meanwhile, the proposed device is accomplished with an embedded VLSI CMOS circuit. It can thus offer high application potential to pH, protein, and DNA probing in SoC-based portable bioelectronics.
Type
journal article