Resistive switching behaviors of ZnO nanorod layers
Resource
Applied Physics Letters, 96(24), 242109
Journal
Applied Physics Letters
Pages
242109
Date Issued
2010
Date
2010
Author(s)
Lin, Chin-An
He, Jr-Hau
Wu, Tai-Bor
Abstract
We have fabricated vertically aligned ZnO nanorod layers (NRLs) on indium tin oxide (ITO) electrodes using a hydrothermal process. The Pt/ZnO NRL/ITO capacitor exhibits bipolar resistive switching behavior. The resistive switching behavior may be related to the oxygen vacancies and/or zinc interstitials confined on the surface of the ZnO NRs, giving rise to the formation of straight and extensible conducting filaments along each vertically aligned ZnO NR. Superior stability in resistive switching characteristics was also observed, demonstrating that ZnO NRLs have the potential for next-generation nonvolatile memory applications.
Type
journal article
File(s)![Thumbnail Image]()
Loading...
Name
07.pdf
Size
23.2 KB
Format
Adobe PDF
Checksum
(MD5):3683fb4091541510459c28c9c3e36679