Analysis of fringing-electric-field-related capacitance behavior of narrow-channel FD SOI NMOS devices using 3D simulation

Journal

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Pages

1376-1379

Date Issued

2007

Author(s)

Chen, C.C.

Lin, O.G.

Kuo, J.B.

DOI

URI

URL

Type

conference paper