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College of Engineering / 工學院
Materials Science and Engineering / 材料科學與工程學系
Enhancement of Dielectric Properties of Nanoscale HfO 2 Thin Films Via Atomic Layer Bombardment
Details
Enhancement of Dielectric Properties of Nanoscale HfO 2 Thin Films Via Atomic Layer Bombardment
Journal
ACS Applied Electronic Materials
Journal Volume
2
Journal Issue
8
Pages
2440-2448
Date Issued
2020
Author(s)
Yin, Y.-T.
Jiang, Y.-S.
Lin, Y.-T.
Chang, T.-J.
Lin, H.-C.
Chen, M.-J.
HSIN-CHIH LIN
MIIN-JANG CHEN
DOI
10.1021/acsaelm.0c00388
URI
https://www.scopus.com/inward/record.url?eid=2-s2.0-85089467600&partnerID=40&md5=28663a49806ab6e4db5c1c1d8718f0f6
https://scholars.lib.ntu.edu.tw/handle/123456789/546678
Type
journal article