Multi-mode VCSEL chip with high-Indium-density InGaAs/AlGaAs quantum-well pairs for QAM-OFDM in multi-mode fiber
Journal
IEEE Journal of Quantum Electronics
Journal Volume
53
Journal Issue
4
Pages
398-403
Date Issued
2017
Author(s)
Cheng-Ting Tsai
Chun-Yen Peng
Chun-Yen Wu
Shan-Fong Leong
Hsuan-Yun Kao
Huai-Yung Wang
You-Wei Chen
Zu-Kai Weng
Yu-Chieh Chi
Hao-Chung Kuo
Jian Jang Huang
Tai-Cheng Lee
Tien-Tsorng Shih
Jau-Ji Jou
Wood-Hi Cheng
Chao-Hsin Wu
Gong-Ru Lin
林恭如
Abstract
An 850-nm multi-mode vertical cavity surface emitting laser (VCSEL) bare chip with high-indium-density InGaAs/AlGaAs quantum-well pairs is demonstrated for directly encoded QAM-OFDM transmission in multi-mode fiber (MMF). By directly encoding the 850-nm VCSEL bare chip with a pre-leveled 14-GHz 16-QAM OFDM data, >50-Gb/s transmission over 100-m-long OM4 MMF can be realized without using data recovery circuit. Increasing the bias current of the VCSEL beyond 7.5Ith improves the signal-to-noise ratio (SNR) and the bit error ratio (BER) of received QAM-OFDM data to 15.5 dB and 2.9 × 10-3, respectively. The 100-m-long OM4 MMF transmission degrades the SNR with its covered bandwidth reducing to 13 GHz. The OFDM subcarrier pre-leveling technique with a slope of 0.2 dB/GHz ensures the 16-QAM-OFDM data transmission with an error vector magnitude of 17.1% and a BER of 3.4 × 10-3.
SDGs
Type
journal article