Advanced high 庥 dielectrics for nano-electronics - Science and technologies
Journal
ECS Transactions
Journal Volume
1
Journal Issue
5
Pages
41-60
Date Issued
2005
Author(s)
Kwo, J.
Abstract
Our research activities on high k dielectrics on GaAs, Si, and GaN are reviewed. Novel Ga2O3(Gd2O3) has unpinned the GaAs Fermi level for the first time. Systematic heat treatments under various gases and temperatures were studied to achieve low leakage currents of 10-8 - 10-9 A/cm2 and low Dit's in the range of 4-9 x 1010 cm-2V-1. By removing moisture from the oxide, thermodynamic stability of Ga2O3(Gd2O3)/GaAs is achieved. The mechanism of Fermi-level unpinning in ALD-Al2O3 on InGaAs was unveiled. Single crystal Gd2O3 was found to grow epitaxially on GaAs and unpin its Fermi level. Inversion- channel, depletion-mode, and power GaAs MOSFET's using Ga2O3 (Gd2O3) as the gate dielectric are discussed. The advances in MBE-HfO2 on Si and the MOSFET's with metal gate of TiN and gate dielectric of HfO2 are discussed. Recent work of nano- thick single crystal oxides of Al2O3 and Sc2O3 epitaxially grown on Si (111) is discussed.
SDGs
Type
conference paper