Room temperature Si laser at Si indirect-bandgap energy by electrical pumping

Journal
Lasers and Electro-Optics Society Annual Meeting-LEOS
Journal Volume
2005
Pages
672-673
Date Issued
2005
Author(s)
Lin, C.-F.
Liang, E.-Z.
Huang, C.-T.
Lin, K.-A.
Shu, S.-J.
DOI
URI
Abstract
Room-temperature lasing actions from Si by continuous-wave electrical pumping are demonstrated. Nanoparticle-modified metal-oxide-Si structures is used. Lasing occurs at the Si indirect-bandgap energy with threshold current 56 mA.
SDGs

[SDGs]SDG7

Type
conference paper

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