Nearly white-light emission from GaN-based light-emitting diodes integrated with a porous SiO2 layer
Journal
Ieee Photonics Technology Letters
Journal Volume
19
Journal Issue
9��12��
Pages
662-664
Date Issued
2007
Author(s)
Abstract
In this letter, we develop a nearly white-light-emitting device by integrating blue/green emission from a GaN-based light-emitting diode with red emission from a porous SiO 2 layer. The porous SiO 2 layer was fabricated by a novel process procedure to create Si nanocrystals on top of the n-type GaN layer. Red light is generated from the metal-oxide-semiconductor (Ni-Au-SiO 2 oxide-n-type GaN) structure due to the electron-hole recombination in the Si nanocrystals. The device shows a blue light emission at a low biased voltage and nearly white-light emission (green and red colors) at a bias voltage between 14 and 16 V. Our results show the potential of applying such an integrated structure to white-light illumination
Type
journal article