Laser assisted imprint of silicon nanostructure with good crystal quality
Resource
Nanotechnology, 2005. 5th IEEE Conference on
Journal
2005 5th IEEE Conference on Nanotechnology
Journal Volume
2
Pages
639-642
Date Issued
2005
Author(s)
Abstract
Excimer laser assisted imprint technology is implemented to create nanostructure on silicon substrate. Patterns with 25-nm feature sizes are successfully fabricated on quartz mold using electron beam lithography for nano-imprint. Transfer of nano-meter features to silicon is experimented. Parameters for optimal imprint are investigated. With a peak light intensity of 1/spl sim/2 J/cm/sup 2/, imprint pressure of 10/spl sim/100 g/cm/sup 2/, and high vacuum at 10/sup 6/ torr, nano-imprint has very good results. The carrier lifetimes before and after laser-assisted imprint are studied and discovered to vary from 1818 /spl mu/s to 640 /spl mu/s. This small damage of Si substrate is attributed to recrystallization of silicon.
Type
conference paper
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