Perfecting high-κ/Ge and /InGaAs interfaces - push for ultimate CMOS and emerging cryogenic electronic devices
Journal
Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022
ISBN
9781665469067
Date Issued
2022-01-01
Author(s)
Young, L. B.
Lin, Y. H.G.
Wan, H. W.
Cheng, Y. T.
CHIH-HUNG HSU
Pi, T. W.
Kwo, J.
Abstract
This paper reviews our work on perfecting high-κ/epi-Si/Ge and high-κ/InGaAs interfaces using in-situ HfO2 and Y2O3, respectively. The heterostructures were grown in our designed ultra-high vacuum (UHV) deposition/ analysis system. The perspective of the work on the related technologies is given. We have employed high-resolution synchrotron radiation photoemission and X-ray diffraction to study the electronic structures and the crystallography of the in-situ prepared gate stacks. Using the in-situ HfO2 on epi-Si/Ge, low interface state density (Dit) values of (2-4) × 1011 eV-1 cm-2 and small charge trapping with a high acceleration factor (γ) of 11 were achieved simultaneously; these are comparable to the state-of-the-art results in the Ge MOS devices using GeOx-based gate stack and thin Si cap via chemical vapor deposition, respectively. The in-situ Y2O3 has effectively passivated InGaAs surface in attaining record-low Dit values of (2-4) × 1011 eV-1cm-2 and high thermal stability of 800 among the high-κ/InGaAs heterostructures. The results have enabled the attainment of record-low subthreshold slope (SS) values in planar inversion-channel InGaAs metal-oxide-semiconductor field-effect-transistors (MOSFETs). The SS values of 22 mV/dec at 77 K and a slope factor m of 1.33, the lowest among the planar InGaAs MOSFETs, were achieved, which are comparable to those obtained in the ultra-thin-body InGaAs FinFETs.
Type
conference paper