Studies of the Electronic Properties of InAs/GaAs Nanostructure using k．p Method
Date Issued
2006
Date
2006
Author(s)
Wu, Chien-Ming
DOI
zh-TW
Abstract
In this thesis, we use k．p theory to study the electronic structure of InAs/GaAs nanostructure, such as quantum well and quantum dot. We present a numerical calculation to calculate the single particle properties of conduction electrons and valence holes of the strained quantum wells (QWs) and quantum dots(QDs), calculated by using one-band effective mass and four-band Luttinger theories, respectively. In the calculation for strain in dots, we adapt the analytic solution of strain tensor in the Fourier representation. In the numerical implementation, we take the plane wave basis to expand the single-particle wave function, and diagonalize the strained Hamiltonian matrix employing the “ARPACK” algorithm. Finally, we can calculate the exciton binding energy from the wave function we obtained.
Our program is applied to two case studies: (001)、 (111)-orientated InGaAs/GaAs QWs and InAs/GaAs self-assembled QDs with InGaAs or GaAs capping layer. In the (111)-orientated QW, the piezoelectric effect reduces the transition energy. We study the InAs QD with InGaAs capping layer and we can find that the transition energy of InAs dots is red shift.
Subjects
量子點
應變張量
砷化銦鎵
砷化銦
InAs/GaAs
quantum dot
strain
InGaAs
Type
thesis
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