The pn junctions of epitaxial germanium on silicon by solid phase doping
Journal
IEEE Transactions on Electron Devices
Journal Volume
61
Journal Issue
7
Pages
2595-2598
Date Issued
2014
Author(s)
Abstract
Boron and phosphorous layers were deposited by ultrahigh-vacuum chemical vapor deposition at 450 °C using B2H6 and PH 3, respectively, to form the abrupt doping profiles in epitaxial Ge on Si substrate. The diffusion process without ion implantation damage is demonstrated by the nearly ideal diode characteristics for the first time. The Ge diodes doped by the boron layer and the phosphorous layer have the ON/OFF ratio of (∼ 1× 105) and (∼ 1.5× 105) with the extremely low reverse current densities of ∼ 1× 10 -4) A/cm2) and (∼ 4, ×,10-5) A/cm 2) , respectively. The good crystalline quality at junction free from implantation damage by in situ solid phase doping reflects these figures of merit. © 1963-2012 IEEE.
Type
journal article