The Growth and Opto-electronic Properties of Quantum Dot Infrared Photodetector
Date Issued
2005
Date
2005
Author(s)
Tsai, Kun-Lin
DOI
en-US
Abstract
The characteristics of InAs/GaAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) with different growth temperature of GaAs spacer or growth rates were studied. According to atomic force microscope (AFM) measurement and PL spectra, the QDs with higher GaAs spacer growth temperature exhibit better luminescent characteristics. On the other hand, it is inferred that the shorter migration length for the In atoms under high growth rate results in less prominent QDs coalescence. Besides, it is found that the charge distribution changes with surface topography by scanning capacitance microscopy (SCM). In addition, by utilizing a 2-nm-Al0.3Ga0.7As capping layer on the InAs quantum dots, a transverse-electric (TE)-field-enhanced multicolor quantum dot infrared photodetector (QDIP) has been achieved. Moreover, after rapid thermal annealing (RTA), the TE dominant peaks can be changed to transverse-magnetic (TM)-field-enhanced and vice versa. This phenomenon results from the RTA creating defects at the boundary of QDs and their surrounding material, which release the compressive strain within the QDs.
Subjects
量子點紅外線偵測器
Quantum Dot Infrared Photodetector
Type
thesis
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