Study of Optical and Electrical Properties of 3C-SiC MOS Capacitor with High Dielectric material: ZrO2
Date Issued
2012
Date
2012
Author(s)
Huang, Yan-Hao
Abstract
This thesis aims to analyze the material properties of cubic silicon carbide (3C-SiC) and study the effects of internal lattice in different ion implantation and annealing conditions. This research used the 3C-SiC samples as substrate and high dielectric constant (high - κ) material zirconium dioxide (ZrO2) as insulation layer to produce the cubic silicon carbide metal oxide semiconductor – capacitor (3C-SiC MOS-C). SiC has superior material properties such as wide band, high thermal conductivity, and high breakdown field. Those make it an unparalleled advantage in the high-voltage and temperature semiconductor components. ZrO2 has a wide bandgap and high dielectric constant (κ = 25-29) , so it can prevent the current tunneling effect and reduce the leakage current density with the higher equivalent oxide thickness.Therefore, this material is used to product the dielectric layer in MOS-C in this research.
The pulsed KrF excimer laser treatment with composite energy density and number of shots have been applied for the post-implant anneals in the non-annealed samples to recover the crystal defects caused by the high-dose ion implantation. And then the laser-annealed samples are compared with the samples of as-grown, non-annealed and thermal-annealed. Many optical measurement technology, such as XRD, FTIR, Raman scattering and Hall effect measurement, are used to analyze the as-grown and Al-, N-, and P-implanted 3C-SiC samples in the conditions of non-annealed, laser-annealed and thermal- annealed. This is used to figure out the effects on the properties of materials caused by the lattice structure and free carriers.
From the XRD spectrum, Al-implanted samples with laser annealing can be shifted to higher 2θ angles and merged with the major peak at higher energy densities. From the FTIR spectrum, this damage caused by ion implantation can be partially recovered by around 150 shots of laser pulses at various energy densities. From the Raman spectrum, the thermal-annealed samples can effeciently enhance the surface crystallinity. Besides, Hall effect measurements reveals the carrier concentration in each samples.
After finishing the optical measurements, this research takes the as-grown, Al-, N-, and P-implanted samples with non-annealed, laser-annealed and thermal-annealed to sputter the high-κ dielectric material ZrO2 on surface with the thickness of 74.3 nm. Therefore, five different areas of the MOS capacitor components were produced successfully. This theis analyzes the impact of the MOS-C interface with the different ion implantation and annealing condition from the C-V and J-E (Leakage current density - Electric field) graphs.
C-V graphs show the shift of flat-band voltage with the changes of the capacitor area in each 3C-SiC samples. The J-E graphs show the continuous leakage current in non-annealed and laser-annealed samples. However the as-grown sample and the thermal-annealed samples can effectively reduce the leakage current density with the better interface contact quality.
Keywords: metal oxide semiconductor – capacitor (MOS-C), cubic silicon carbide (3C-SiC), zirconium dioxide (ZrO2), eximer laser, X-Ray powder Diffractometer (XRD), Fourier Transform Infrared (FTIR), Raman spectroscopy, Hall effect measurement, Lattice defect, laser anneal
Subjects
metal oxide semiconductor – capacitor (MOS-C)
cubic silicon carbide (3C-SiC)
zirconium dioxide (ZrO2)
eximer laser
X-Ray powder Diffractometer (XRD)
Fourier Transform Infrared (FTIR)
Raman spectroscopy
Hall effect measurement
Lattice defect
laser anneal
Type
thesis
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